Oblique stacking of three-dimensional dome islands in Ge/Si multilayers

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Oblique stacking of three-dimensional dome islands in GeÕSi multilayers

The organization of Ge ‘‘dome’’ islands in Ge/Si multilayers has been investigated by cross-sectional transmission electron microscopy. Ge domes are found to spontaneously arrange in oblique stacks, replicating at a well-defined angle from one bilayer to the next. The formation of oblique island stacks is governed by a complex interplay of surface strain, generated by the already buried islands...

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ژورنال

عنوان ژورنال: Applied Physics Letters

سال: 2001

ISSN: 0003-6951,1077-3118

DOI: 10.1063/1.1357214